2025 IEEE 16th International Conference on ASIC

Oct. 21-24, 2025, Crowne Plaza Kunming City Centre, Kunming, China

S2: Role of Dielectrics from Field Effect Transistors to Nan-Systems

 

Title:Role of Dielectrics from Field Effect Transistors to Nan-Systems
Location: Meeting Room 1, 3rd Floor, Crowne Plaza Kunming City Centre
Time: 16:30-17:15, Oct. 22, 2025, Wednesday
Speaker: Prof. Durga Misra (New Jersey Institute of Technology, USA)

 

Abstract: IEEE Electron Devices Society is celebrating 100 years of the Field Effect Transistor (FET) in 2025. The first Canadian patent filed by Julius Lilienfeld on 22 October 1925. During the past century there was a phenomenal developments and innovations of the FET that contributed to many applications including computing and communications. The contribution of dielectrics to FET’s development is highly significant. Historically SiO2 was the main driver of MOSFETs as the transistor’s gate dielectric. Once the thickness of SiO2 reached the onset of direct tunneling region (<1.5 nm) HfO2-based high-k insulators were introduced to suppress the direct-tunneling leakage current. The transistor has transformed from a planar device to a three-dimensional device to a gate all around device. Several applications of high-k dielectrics have emerged incuding ferroelectric FETs and resistive random-access memory (RRAM) devices that are being investigated for possible implementation in systems with artificial intelligence hardware. The electrical performance in these devices depends on the dielectric deposition process, precise selection of deposition parameters, pre-deposition surface treatments and subsequent thermal budget. The talk will outline the role of dielectrics from FETs to modern nanoelectronics devices and systems.

 

Bio: 

Prof. Durga Misra is a Professor and Chair of the Department of electrical and Computer Engineering, New Jersey Instittue of Technology, Newark, USA. His current esearch interests are in the areas of nanoelectronics devices and circuits, especially in nanometer CMOS gate stacks and switching devices. He is Fellow of IEEE. He is a distinguished lecturer of IEEE Electron Devices Society (EDS). He is also a Fellow of the Eectrochemical Society (ECS). He received the Thomas Collinan Award from the Dielectric Science and Technology Division and the Electronics and Photonics Division Award from ECS. He edited and co-edited more than 50 books and conference proceedings in his field of research. He has published more than 200 technical articles in peer reviewed journals and International Conferecne proceedings including more than 100 Invited Talks. He has graduated over 20 Ph.D. students and 55 M.S. students. He received the M.S. and Ph.D. degrees in electrical engineering from the University of Waterloo, Waterloo, ON, Canada, in 1985 and 1988, respectively.